Short-channel immunity, with a subthreshold slope of 66 mV per decade, off-state current 10 GHz, have been demonstrated. In this work, we created short-channel active transistors based on an ultra-thin (down to 4 nm) ITO channel and a high-quality, lanthanum-doped hafnium oxide dielectric of equivalent oxide thickness of 0.8 nm, with performance comparative to that of existing metal oxides and emerging two-dimensional materials. The proposed approach offers an alternative way to take advantage of the oxide semiconductors and their application in TFTs with related circuits.Īlthough indium tin oxide (ITO) is widely used in optoelectronics due to its high optical transmittance and electrical conductivity, its degenerate doping limits exploitation as a semiconduction material. These surrounded-channel effects become noticeable in the device with the gap distance less than 1 μ m, with gate electric field squeezing in the submicron gaps.
According to device simulation, the improvement of the wrapping insulators device correlates with the three-dimensional accumulation of carriers and increased gate electric field near the semiconductor-dielectric interface. The maximum transconductance g m is 27.9% higher than dual gate TFT and 73.1% higher than single gate TFT.
The devices show enhanced performance as compared with dual-gate and single gate TFTs, exhibiting higher drain current and steeper subthreshold swing. In such TFTs, semiconducting channels have 200 nm gaps parallel to the drain field, are wrapped by oxide insulators and thus the gate field. In this work, we demonstrate nano-splitting and field-surrounding semiconducting channels (based on InGaZnO) in TFTs, which is fabricated by facile subwavelength photolithography. In thin film transistors (TFTs), applying dual gate has been reported to be efficient in enhancing the coupling between the gate field and the channel accumulation.
Oxide semiconductors feature high tunability of carrier concentrations under the control of electric field.
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